Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm
Artikel i vetenskaplig tidskrift, 2007
Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed.
light emission
metamorphic
InGaAs quantum well
Författare
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Ivar Tangring
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Qinfen Gu
Chalmers, Mikroteknologi och nanovetenskap (MC2)
Mahdad Sadeghi
Chalmers, Mikroteknologi och nanovetenskap (MC2)
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Xiaodong Wang
Institute of Semiconductors Chinese Academy of Sciences
C.H. Ma
Institute of Semiconductors Chinese Academy of Sciences
I.A. Buyanova
Linkopings universitet
W.M. Chen
Linkopings universitet
Thin Solid Films
0040-6090 (ISSN)
Vol. 515 10 4348-4351Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1016/j.tsf.2006.07.098