Metamorphic InGaAs quanum wells for light emission at 1.3 – 1.6 µm
Journal article, 2007
Metamorphic InGaAs quantum well structures grown on GaAs reveal strong light emission at 1.3-1.6 mu m, smooth surface with an average roughness below 2 nm. and good rectifying I-V characteristics. Dark line defects are found in the QW Post growth thermal annealing further improves the luminescence efficiency but does not remove those dark line defects. Some challenges of epitaxial growth using this method for laser applications are discussed.
light emission
metamorphic
InGaAs quantum well
Author
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Ivar Tangring
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Qinfen Gu
Chalmers, Microtechnology and Nanoscience (MC2)
Mahdad Sadeghi
Chalmers, Microtechnology and Nanoscience (MC2)
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Xiaodong Wang
Institute of Semiconductors Chinese Academy of Sciences
C.H. Ma
Institute of Semiconductors Chinese Academy of Sciences
I.A. Buyanova
Linkopings universitet
W.M. Chen
Linkopings universitet
Thin Solid Films
0040-6090 (ISSN)
Vol. 515 10 4348-4351Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1016/j.tsf.2006.07.098