1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate
Artikel i vetenskaplig tidskrift, 2017
An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/ s at an energy dissipation of 100 fJ/ bit is demonstrated for a device with > 50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.
resistors
power dividers
45 GHz
compact dual-band five-way Wilkinson power divider
phase imbalances
915 GHz
isolation resistors
frequency 2
magnitude imbalances
two-section impedance transformers
RF performance
frequency 0
Författare
Ewa Simpanen
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Johan Gustavsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Erik Haglund
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Emanuel Haglund
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
W. V. Sorin
Chalmers University of Technology
S. Mathai
Chalmers University of Technology
M. R. Tan
Chalmers University of Technology
Electronics Letters
0013-5194 (ISSN) 1350-911X (eISSN)
Vol. 53 13 869-870Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1049/el.2017.1165