1060 nm single-mode vertical-cavity surface-emitting laser operating at 50 Gbit/s data rate
Journal article, 2017
An energy efficient 1060 nm GaAs-based oxide-confined vertical-cavity surface-emitting laser designed for high-speed modulation and singlemode emission has been developed. A record data rate of 50 Gbit/ s at an energy dissipation of 100 fJ/ bit is demonstrated for a device with > 50 dB side-mode-suppression and 0.2 mA threshold current, making this laser a promising light source for long-reach optical interconnects.
resistors
power dividers
45 GHz
compact dual-band five-way Wilkinson power divider
phase imbalances
915 GHz
isolation resistors
frequency 2
magnitude imbalances
two-section impedance transformers
RF performance
frequency 0
Author
Ewa Simpanen
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Johan Gustavsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Erik Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Emanuel Haglund
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
Anders Larsson
Chalmers, Microtechnology and Nanoscience (MC2), Photonics
W. V. Sorin
Chalmers University of Technology
S. Mathai
Chalmers University of Technology
M. R. Tan
Chalmers University of Technology
Electronics Letters
0013-5194 (ISSN) 1350-911X (eISSN)
Vol. 53 13 869-870Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1049/el.2017.1165