Effect of rapid thermal annealing on InP1-xBix grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2015
The effect of post-growth rapid thermal annealing on structural and optical properties of InP1-xBix thin films was investigated. InPBi shows good thermal stability up to 500 °C and a modest improvement in photoluminescence (PL) intensity with an unchanged PL spectral feature. Bismuth outdiffusion from InPBi and strain relaxation are observed at about 600 °C. The InPBi sample annealed at 800 °C shows an unexpected PL spectrum with different energy transitions.
ilute bismides
hotoluminescence
InPBi
hermal annealing
hermal tability
eep level
Författare
X. Y. Wu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
K. Wang
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
W. W. Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Yuxin Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Yi Gu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
H. Xu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Z. Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
J. Cui
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30 9Ämneskategorier (SSIF 2011)
Atom- och molekylfysik och optik
DOI
10.1088/0268-1242/30/9/094014