20 μm gate width CVD graphene FETs for 0.6 THz detection

Paper i proceeding, 2014

We have fabricated 20 μm gate width graphene field effect transistors (GFETs) based on graphene grown by chemical vapor deposition (CVD). These GFETs are integrated with split bow-tie antennae for room temperature, direct detection of a 0.6 THz signal. Our detectors reach a maximum optical responsivity of 3.0 V/W and a minimum noise-equivalent power (NEP) of 700 pW/Hz^0.5. The successful demonstration of THz detection using CVD graphene introduces the possibility for scalable detector production.