20 μm gate width CVD graphene FETs for 0.6 THz detection
Paper in proceeding, 2014
We have fabricated 20 μm gate width graphene field
effect transistors (GFETs) based on graphene grown by chemical
vapor deposition (CVD). These GFETs are integrated with split
bow-tie antennae for room temperature, direct detection of a 0.6 THz signal. Our detectors reach a maximum optical responsivity of 3.0 V/W and a minimum noise-equivalent power (NEP) of 700 pW/Hz^0.5. The successful demonstration of THz detection using CVD graphene introduces the possibility for scalable detector production.
Graphene field effect transistors
direct terahertz detection
CVD graphene
antenna-integrated detectors
Author
Audrey Zak
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
MICHAEL ANDERSSON
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Maris Bauer
Alvydas Lisauskas
Hartmut Roskos
Jan Stake
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
39th International Conference on Infrared, Millimeter and Terahertz Waves, IRMMW-THz 2014, Tucson, United States, 14-19 September 2014
2162-2027 (ISSN)
Art. no. 6956250-978-1-4799-3877-3 (ISBN)
Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
Nano Technology
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/IRMMW-THz.2014.6956250
ISBN
978-1-4799-3877-3