Intrinsically tunable bulk acoustic wave resonators based on sol-gel grown PMN-PT films
Artikel i vetenskaplig tidskrift, 2014
Intrinsically tunable bulk acoustic wave resonators, based on sol-gel 0.70Pb(Mg1/3Nb2/3)O3-
0.30PbTiO3 (PMN-PT) thin films, with high effective electromechanical coupling coefficient of
13% and tunability of the series resonance frequency up to 4.0% are fabricated and characterized.
The enhanced electroacoustic properties of the PMN-PT resonators are attributed to the mechanism
of polarization rotation occurring in the region of the morphotropic phase boundary.
Electroacoustic performance of the PMN-PT resonators is analyzed using the theory of dc fieldinduced
piezoelectric effect in ferroelectrics. Extrinsic acoustic loss in the PMN-PT resonators is
analyzed using the model of the wave scattering at reflections from rough interfaces. Mechanical
Q-factor of the resonators is up to 70 at 4.1 GHz and limited mainly by losses in the PMN-PT film.
effective electromechanical coupling coefficient
roughness induced attenuation of acoustic waves.
ferroelectrics
morphotropic phase boundary
dc field induced piezoelectric effect
sol-gel technique
intrinsically tunable film bulk acoustic wave (BAW) resonators
tunability of resonance frequency
quality factor
film microstructure
0.70Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (PMN-PT) thin films
Författare
Andrei Vorobiev
Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik
Matjaz Spreitzer
Jozef Stefan Institute
Asja Veber
Jozef Stefan Institute
Danilo Suvorov
Jozef Stefan Institute
Spartak Gevorgian
Chalmers, Mikroteknologi och nanovetenskap (MC2), Terahertz- och millimetervågsteknik
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 116 6 Art. no. 064101- 064101Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Kommunikationssystem
Annan elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1063/1.4893179