Intrinsically tunable bulk acoustic wave resonators based on sol-gel grown PMN-PT films
Journal article, 2014
Intrinsically tunable bulk acoustic wave resonators, based on sol-gel 0.70Pb(Mg1/3Nb2/3)O3-
0.30PbTiO3 (PMN-PT) thin films, with high effective electromechanical coupling coefficient of
13% and tunability of the series resonance frequency up to 4.0% are fabricated and characterized.
The enhanced electroacoustic properties of the PMN-PT resonators are attributed to the mechanism
of polarization rotation occurring in the region of the morphotropic phase boundary.
Electroacoustic performance of the PMN-PT resonators is analyzed using the theory of dc fieldinduced
piezoelectric effect in ferroelectrics. Extrinsic acoustic loss in the PMN-PT resonators is
analyzed using the model of the wave scattering at reflections from rough interfaces. Mechanical
Q-factor of the resonators is up to 70 at 4.1 GHz and limited mainly by losses in the PMN-PT film.
effective electromechanical coupling coefficient
roughness induced attenuation of acoustic waves.
ferroelectrics
morphotropic phase boundary
dc field induced piezoelectric effect
sol-gel technique
intrinsically tunable film bulk acoustic wave (BAW) resonators
tunability of resonance frequency
quality factor
film microstructure
0.70Pb(Mg1/3Nb2/3)O3-0.30PbTiO3 (PMN-PT) thin films
Author
Andrei Vorobiev
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Matjaz Spreitzer
Jozef Stefan Institute
Asja Veber
Jozef Stefan Institute
Danilo Suvorov
Jozef Stefan Institute
Spartak Gevorgian
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 116 6 Art. no. 064101- 064101Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Communication Systems
Other Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1063/1.4893179