Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Artikel i vetenskaplig tidskrift, 2013
In this paper, we present a study of the cryogenic performance of InP high electron mobility transistors (HEMTs) in the low-noise region by means of Monte Carlo simulations. A decrease of the contact resistances and an increase in the electron velocity in the channel together with enhanced channel electron confinement upon cooling of the device are observed, and considered to be the reason for the excellent low-noise behavior of cryogenic InP HEMTs. These findings are supported by a good agreement between simulated and experimental DC, RF, and noise figure data of a 130-nm gate length InP HEMT at 300 and 77 K. An increase of the transconductance g(m) and gate-to-source capacitance C-gs is observed when cooling from 300 to 77 K as a consequence of electron velocity increase and improved channel confinement.
InGaAs/InAlAs/InP high electron mobility transistor (HEMT)
noise parameters
Monte Carlo simulations
low noise
Cryogenic temperature
Författare
Helena Rodilla
GigaHertz Centrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Joel Schleeh
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Per-Åke Nilsson
GigaHertz Centrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Niklas Wadefalk
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
J. Mateos
Universidad de Salamanca
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
IEEE Transactions on Electron Devices
0018-9383 (ISSN)
Vol. 60 5 1625-1631Styrkeområden
Informations- och kommunikationsteknik
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1109/TED.2013.2253469