Cryogenic Performance of Low-Noise InP HEMTs: a Monte Carlo Study
Journal article, 2013
In this paper, we present a study of the cryogenic performance of InP high electron mobility transistors (HEMTs) in the low-noise region by means of Monte Carlo simulations. A decrease of the contact resistances and an increase in the electron velocity in the channel together with enhanced channel electron confinement upon cooling of the device are observed, and considered to be the reason for the excellent low-noise behavior of cryogenic InP HEMTs. These findings are supported by a good agreement between simulated and experimental DC, RF, and noise figure data of a 130-nm gate length InP HEMT at 300 and 77 K. An increase of the transconductance g(m) and gate-to-source capacitance C-gs is observed when cooling from 300 to 77 K as a consequence of electron velocity increase and improved channel confinement.
InGaAs/InAlAs/InP high electron mobility transistor (HEMT)
noise parameters
Monte Carlo simulations
low noise
Cryogenic temperature
Author
Helena Rodilla
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Joel Schleeh
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
Per-Åke Nilsson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Wadefalk
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
J. Mateos
Universidad de Salamanca
Jan Grahn
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
GigaHertz Centre
IEEE Transactions on Electron Devices
0018-9383 (ISSN)
Vol. 60 5 1625-1631Areas of Advance
Information and Communication Technology
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
Infrastructure
Nanofabrication Laboratory
DOI
10.1109/TED.2013.2253469