Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates
Artikel i vetenskaplig tidskrift, 2011
Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.
electrode
graphene
movable gate
sheets
field effect transistor
monolayer graphene
resonators
Carbon nanotube
performance
Författare
J. Svensson
Lunds Universitet
N. Lindahl
Goteborgs Universitet
H. Yun
Konkuk University
M. Seo
Konkuk University
Daniel Midtvedt
Chalmers, Teknisk fysik, Kondenserade materiens teori
Yury Tarakanov
Chalmers, Teknisk fysik, Kondenserade materiens teori
Niclas Lindvall
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
O. Nerushev
University of Edinburgh
Jari Kinaret
Chalmers, Teknisk fysik, Kondenserade materiens teori
SangWook Lee
Konkuk University
Eleanor E B Campbell
Konkuk University
University of Edinburgh
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 11 9 3569-3575Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Annan fysik
Infrastruktur
Nanotekniklaboratoriet
DOI
10.1021/nl201280q