Carbon Nanotube Field Effect Transistors with Suspended Graphene Gates
Journal article, 2011
Novel field effect transistors with suspended graphene gates are demonstrated. By incorporating mechanical motion of the gate electrode, it is possible to improve the switching characteristics compared to a static gate, as shown by a combination of experimental measurements and numerical simulations. The mechanical motion of the graphene gate is confirmed by using atomic force microscopy to directly measure the electrostatic deflection. The device geometry investigated here can also provide a sensitive measurement technique for detecting high-frequency motion of suspended membranes as required, e.g., for mass sensing.
electrode
graphene
movable gate
sheets
field effect transistor
monolayer graphene
resonators
Carbon nanotube
performance
Author
J. Svensson
Lunds Universitet
N. Lindahl
Goteborgs Universitet
H. Yun
Konkuk University
M. Seo
Konkuk University
Daniel Midtvedt
Chalmers, Applied Physics, Condensed Matter Theory
Yury Tarakanov
Chalmers, Applied Physics, Condensed Matter Theory
Niclas Lindvall
Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics
O. Nerushev
University of Edinburgh
Jari Kinaret
Chalmers, Applied Physics, Condensed Matter Theory
SangWook Lee
Konkuk University
Eleanor E B Campbell
Konkuk University
University of Edinburgh
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 11 9 3569-3575Areas of Advance
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Other Physics Topics
Infrastructure
Nanofabrication Laboratory
DOI
10.1021/nl201280q