Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Artikel i vetenskaplig tidskrift, 2011
Single crystal surfaces
radiation photoelectron spectroscopy
Ab initio calculations
surface
basis-set
Synchrotron
state
molecular-beam epitaxy
Gallium-arsenide (GaAs)
total-energy calculations
growth
metals
dynamics
Scanning-tunneling microscopy
Indium-arsenide (InAs)
method
Surface reconstruction
sn-doped gaas
augmented-wave
Författare
J. J. K. Lang
Turun yliopisto
P. Laukkanen
Turun yliopisto
Tampere University of Technology
M. P. J. Punkkinen
The Royal Institute of Technology (KTH)
Turun yliopisto
M. Ahola-Tuomi
Turun yliopisto
M. Kuzmin
Ioffe Institute
Turun yliopisto
V. Tuominen
Turun yliopisto
J. Dahl
Turun yliopisto
M. Tuominen
Turun yliopisto
R. E. Perala
Turun yliopisto
K. Schulte
Lunds Universitet
Johan Adell
Chalmers, Teknisk fysik, Fasta tillståndets fysik
J. Sadowski
Institute of Physics of the Polish Academy of Sciences
Lunds Universitet
Janusz Kanski
Chalmers, Teknisk fysik, Fasta tillståndets fysik
M. Guina
Tampere University of Technology
M. Pessa
Tampere University of Technology
K. Kokko
Turun yliopisto
B. Johansson
The Royal Institute of Technology (KTH)
Uppsala Universitet
L. Vitos
The Royal Institute of Technology (KTH)
Uppsala Universitet
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences
I. J. Vayrynen
Turun yliopisto
Surface Science
0039-6028 (ISSN)
Vol. 605 9-10 883-888Ämneskategorier (SSIF 2011)
Fysikalisk kemi
DOI
10.1016/j.susc.2011.01.034