Tin-stabilized (1 x 2) and (1 x 4) reconstructions on GaAs(100) and InAs(100) studied by scanning tunneling microscopy, photoelectron spectroscopy, and ab initio calculations
Journal article, 2011
Tin (Sn) induced (1 x 2) reconstructions on GaAs(100) and InAs(100) substrates have been studied by low energy electron diffraction (LEED), photoelectron spectroscopy, scanning tunneling microscopy/spectroscopy (STM/STS) and ab initio calculations. The comparison of measured and calculated STM images and surface core-level shifts shows that these surfaces can be well described with the energetically stable building blocks that consist of Sn-III dimers. Furthermore, a new Sn-induced (1 x 4) reconstruction was found. In this reconstruction the occupied dangling bonds are closer to each other than in the more symmetric (1 x 2) reconstruction, and it is shown that the (1 x 4) reconstruction is stabilized as the adatom size increases.
Single crystal surfaces
radiation photoelectron spectroscopy
Ab initio calculations
surface
basis-set
Synchrotron
state
molecular-beam epitaxy
Gallium-arsenide (GaAs)
total-energy calculations
growth
metals
dynamics
Scanning-tunneling microscopy
Indium-arsenide (InAs)
method
Surface reconstruction
sn-doped gaas
augmented-wave
Author
J. J. K. Lang
Turun yliopisto
P. Laukkanen
Turun yliopisto
Tampere University of Technology
M. P. J. Punkkinen
The Royal Institute of Technology (KTH)
Turun yliopisto
M. Ahola-Tuomi
Turun yliopisto
M. Kuzmin
Ioffe Institute
Turun yliopisto
V. Tuominen
Turun yliopisto
J. Dahl
Turun yliopisto
M. Tuominen
Turun yliopisto
R. E. Perala
Turun yliopisto
K. Schulte
Lunds Universitet
Johan Adell
Chalmers, Applied Physics, Solid State Physics
J. Sadowski
Institute of Physics of the Polish Academy of Sciences
Lunds Universitet
Janusz Kanski
Chalmers, Applied Physics, Solid State Physics
M. Guina
Tampere University of Technology
M. Pessa
Tampere University of Technology
K. Kokko
Turun yliopisto
B. Johansson
The Royal Institute of Technology (KTH)
Uppsala Universitet
L. Vitos
The Royal Institute of Technology (KTH)
Uppsala Universitet
Institute for Solid State Physics and Optics, Wigner Research Centre for Physics, Hungarian Academy of Sciences
I. J. Vayrynen
Turun yliopisto
Surface Science
0039-6028 (ISSN)
Vol. 605 9-10 883-888Subject Categories (SSIF 2011)
Physical Chemistry
DOI
10.1016/j.susc.2011.01.034