Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
Artikel i vetenskaplig tidskrift, 2011
A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.
transistors
bilayer graphene
Författare
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Kasper Moth-Poulsen
UC Berkeley
R. Yakimova
Linkopings universitet
T. Bjornholm
Kobenhavns Universitet
V. Fal'ko
Lancaster University
A.Y. Tzalenchuk
National Physical Laboratory
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Advanced Materials
09359648 (ISSN) 15214095 (eISSN)
Vol. 23 7 878-+Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1002/adma.201003993