Non-Volatile Photochemical Gating of an Epitaxial Graphene/Polymer Heterostructure
Journal article, 2011

A novel heterostructure based on epitaxial graphene grown on silicon carbide combined with two polymers is demonstrated, with a neutral spacer and a photoactive layer that provides potent electron acceptors under UV light exposure. UV exposure of this heterostructure enables control of the electrical parameters of graphene in a non-invasive, non-volatile, and reversible way.

transistors

bilayer graphene

Author

Samuel Lara Avila

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Kasper Moth-Poulsen

UC Berkeley

R. Yakimova

Linkopings universitet

T. Bjornholm

Kobenhavns Universitet

V. Fal'ko

Lancaster University

A.Y. Tzalenchuk

National Physical Laboratory

Sergey Kubatkin

Chalmers, Microtechnology and Nanoscience (MC2), Quantum Device Physics

Advanced Materials

09359648 (ISSN) 15214095 (eISSN)

Vol. 23 7 878-+

Subject Categories (SSIF 2011)

Physical Sciences

DOI

10.1002/adma.201003993

More information

Created

10/7/2017