Anisotropic transport properties in InAs/AlSb heterostructures
Artikel i vetenskaplig tidskrift, 2010
We have investigated the anisotropic transport behavior of InAs/AlSb heterostructures grown on a
(001) InP substrate. An electrical analysis showed anisotropic sheet resistance Rsh and electron
mobility μn in the two dimensional electron gas (2DEG). Hall measurements demonstrated an
enhanced anisotropy in μn when cooled from room temperature to 2 K. High electron mobility
transistors exhibited 27% higher maximum drain current IDS and 23% higher peak transconductance
gm when oriented along the [1-10] direction. The anisotropic transport behavior in the 2DEG was
correlated with an asymmetric dislocation pattern observed in the surface morphology and by
cross-sectional microscopy analysis of the InAs/AlSb heterostructure.
Hall effect
aluminium compounds
semiconductor growth
III-V semiconductors
electric resistance
indium compounds
cooling
dislocations
surface morphology
two-dimensional electron gas
high electron mobility transistors
electron mobility
semiconductor heterojunctions
Författare
Giuseppe Moschetti
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Huan Zhao Ternehäll
Chalmers, Teknisk fysik, Fysikalisk elektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
G. Dambrine
Universite des Sciences et Technologies de Lille
Chalmers University of Technology
S. Bollaert
Chalmers University of Technology
Universite des Sciences et Technologies de Lille
L. Desplanque
Universite des Sciences et Technologies de Lille
Chalmers University of Technology
X. Wallart
Chalmers University of Technology
Universite des Sciences et Technologies de Lille
Jan Grahn
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 97 24 3- 243510Styrkeområden
Nanovetenskap och nanoteknik
Materialvetenskap
Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
DOI
10.1063/1.3527971