MMIC-Based Components for MM-Wave Instrumentation
Artikel i övrig tidskrift, 2010
In this letter, we present results of fully integrated 90-130 GHz receiver based on 100 nm mHEMT technology. The receiver contains a low noise amplifier (LNA), mixer and LO multiplier chain integrated into a single monolithic microwave integrated circuit (MMIC). The circuit is packaged into a waveguide block, characterized and compared to on-wafer measurements. Waveguide to microstrip transitions are used to interface the MMIC to the waveguide. A breakout LNA circuit is also packaged, and its performance is compared to the receiver. The LNA noise was characterized on a wafer and after packaging. The packaged module is measured at both room and cryogenic temperatures, NF of 3.7 dB is measured at 300 K and 0.9 dB at 20 K.
Frequency multiplier
ghz
millimeter wave
millimeter wave circuits
monolithic microwave integrated circuit (MMIC)
receivers
118 GHz
mHEMT
Författare
Vessen Vassilev
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Niklas Wadefalk
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Rumen Kozhuharov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Morteza Abbasi
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Sten Gunnarsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
GigaHertz Centrum
T. Pellikka
Omnisys Instruments AB
A. Emrich
Omnisys Instruments AB
Miroslav Pantaleev
Chalmers, Rymd- och geovetenskap, Onsala rymdobservatorium
I. Kallfass
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
A. Leuther
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN)
Vol. 20 10 578-580Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1109/LMWC.2010.2065797