An X-Band AlGaN/GaN MMIC Receiver Front-End
Artikel i vetenskaplig tidskrift, 2010
This letter presents an integrated AlGaN/GaN X-band receiver front-end. This is to the authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver front-end. The receiver uses an integrated SPDT switch to reduce size, weight and cost compared to circulator based transceiver front-ends. The integrated front-end has more than 13 dB of gain and a noise figure of 3.5 dB at 11 GHz.
AlGaN/GaN HEMT LNA MMIC noise receiver switch transceiver
Författare
Mattias Thorsell
GigaHertz Centrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Martin Fagerlind
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Kristoffer Andersson
GigaHertz Centrum
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Niklas Billström
Saab AB
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN)
Vol. 20 1 55-57Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.1109/LMWC.2009.2035968