An X-Band AlGaN/GaN MMIC Receiver Front-End
Journal article, 2010
This letter presents an integrated AlGaN/GaN X-band receiver front-end. This is to the authors knowledge the first published results of an integrated AlGaN/GaN MMIC receiver front-end. The receiver uses an integrated SPDT switch to reduce size, weight and cost compared to circulator based transceiver front-ends. The integrated front-end has more than 13 dB of gain and a noise figure of 3.5 dB at 11 GHz.
AlGaN/GaN HEMT LNA MMIC noise receiver switch transceiver
Author
Mattias Thorsell
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Martin Fagerlind
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Kristoffer Andersson
GigaHertz Centre
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Niklas Billström
Saab AB
Niklas Rorsman
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN)
Vol. 20 1 55-57Subject Categories (SSIF 2011)
Other Electrical Engineering, Electronic Engineering, Information Engineering
Condensed Matter Physics
DOI
10.1109/LMWC.2009.2035968