Raman scattering studies of dilute InP1-xBix alloys reveal unusually strong oscillator strength for Bi-induced modes
Journal article, 2015
Room-temperature Raman scattering studies of new InP1-xBix alloys grown by molecular beam epitaxy are reported. Two new Bi-induced vibrations observed at 149 and 171 cm-1 are assigned to InBi-like TO and LO phonon modes, respectively, and exhibit an unusually strong intensity for the dilute regime. Two additional modes at 311 and 337 cm-1 are resolved as well with unknown origins. The Raman intensities of the InBi-like TO and LO bands, as well as the new mode at 337 cm-1, exhibit strong and linear dependence on the Bi concentration for the composition range studied, 0.003 ≤ x ≤ 0.023. This correlation may serve as a fast and convenient means of characterizing bismuth composition not only in the ternary alloy InP1-xBix but also in the quaternaries such as In1-yGayP1-xBix and In1-yAlyP1-xBix.
Raman scattering
oscillator strength
InPBi
molecular beam epitaxy
dilute bismides
Author
W. W. Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
J.A. Steele
University of Wollongong
P. Wang
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
K. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
Yuxin Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
X. Wu
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
H. Xu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
Z. Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
S. Xu
The University of Hong Kong
P. F. Lu
Beijing University of Posts and Telecommunications
L. Wu
Beijing University of Posts and Telecommunications
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Semiconductor Science and Technology
0268-1242 (ISSN) 1361-6641 (eISSN)
Vol. 30 9Subject Categories (SSIF 2011)
Manufacturing, Surface and Joining Technology
Nano Technology
DOI
10.1088/0268-1242/30/9/094003