Monolithically Integrated 200-GHz Double-Slot Antenna and Resistive Mixers in a GaAs-mHEMT MMIC Process
Journal article, 2011
This paper presents the design and characterization of two resistive mixers integrated with a double-slot antenna in a 100-nm GaAs mHEMT technology. With RF frequency varying
from 185 to 202 GHz, a typical conversion loss(Lc)of 8.0 dB is measured for the single-ended mixer and a typical Lc of 12.2 dB is obtained from one of the two IF outputs for the single-balanced mixer. Each mixer is integrated with a double-slot antenna and mounted on an Si lens. Incorporating the antenna gain and the conversion loss of the mixer, a typical receiver gain of 15.4 dB is achieved for the integrated antenna with single-ended mixer, and a typical receiver gain of 11.2 dB is obtained for the integrated antenna with single-balanced mixer by measuring one of the two IF outputs.
In this paper, a novel method is also proposed and proved to evaluate a moderate to high noise figure (NF) device in millimeter/submillimeter frequency band. The result shows that the single-ended mixer in this paper has an NF around 1.0 dB higher compared to its Lc, and the single-balanced one has an NF about 1.6 dB higher than its Lc at room-temperature operation.
GaAs
metamorphic HEMT (mHEMT)
monolithic microwave integrated circuit (MMIC)
system gain
double-slot antenna
resistive mixer
N-times
noise figure (NF)
Conversion loss
G-band
Author
Yu Yan
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Yogesh Karandikar
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Sten Gunnarsson
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
Bahar M. Motlagh
Chalmers University of Technology
Serguei Cherednichenko
Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory
Ingmar Kallfass
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
Karlsruhe Institute of Technology (KIT)
Arnulf Leuther
Karlsruhe Institute of Technology (KIT)
Fraunhofer-Institut fur Angewandte Festkorperphysik - IAF
Herbert Zirath
Chalmers, Microtechnology and Nanoscience (MC2), Microwave Electronics
IEEE Transactions on Microwave Theory and Techniques
0018-9480 (ISSN)
Vol. 59 10 2494-2503Areas of Advance
Information and Communication Technology
Nanoscience and Nanotechnology
Subject Categories (SSIF 2011)
Electrical Engineering, Electronic Engineering, Information Engineering
DOI
10.1109/TMTT.2011.2161326