The influence of inhomogeneous trap distribution on results of DLTS study
Journal article, 2011

A model is developed to describe how a narrow distribution of deep traps adjacent to quantum dots (QDs) influences the trap-related signals measured by frequency scanned deep level transient spectroscopy (FS-DLTS). By comparison with experiment, it is demonstrated that traps with a steep concentration gradient, positioned in the so called transition layer close to the edge of the depletion region ("lambda-effect"), have a strong influence on DLTS signal amplitudes. This is manifested by an extreme sensitivity to the change in the Fermi-level position when temperature is varied.

spectroscopy

v7

p399

semiconductors

1989

molecular-beam epitaxy

electron traps

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Author

M. Kaczmarczyk

Instytut Technologii Elektronowej

M. Kaniewska

Instytut Technologii Elektronowej

Olof Engström

Chalmers, Microtechnology and Nanoscience (MC2), Terahertz and Millimetre Wave Laboratory

Microelectronics and Reliability

0026-2714 (ISSN)

Vol. 51 7 1159-1161

Subject Categories (SSIF 2011)

Physical Sciences

Electrical Engineering, Electronic Engineering, Information Engineering

DOI

10.1016/j.microrel.2011.01.011

More information

Created

10/8/2017