Noise performance of the radio-frequency single-electron transistor
Artikel i vetenskaplig tidskrift, 2004
Measurements were performed on aluminum and multiwalled carbon nanotube radio-frequency single-electron transistors (RF-SETs) and analyzed the results carefully. A detailed noise model based on scattering matrix and noise wave formalisms was developed. The signal-to-noise ratios obtained from the model agree well with the measured charge sensitivities. It was found that, in the setup, the first stage HEMT amplifier was the most inadequate component contributing nearly all of the charge noise.
limit
device
balanced amplifiers
range
charge sensitivity
photon detector
Författare
L Roschier
Aalto University
P Hakonen
Aalto University
Kevin Bladh
Chalmers, Mikroteknologi och nanovetenskap (MC2)
P Delsing
Chalmers University of Technology
K Lehnert
Yale University
University of Colorado at Boulder
L Spietz
Yale University
RJ Schoelkopf
Yale University
Journal of Applied Physics
0021-8979 (ISSN) 1089-7550 (eISSN)
Vol. 95 3 1274-1286Ämneskategorier (SSIF 2011)
Annan teknik
DOI
10.1063/1.1635972