SiC Varactors for Dynamic Load Modulation of High Power Amplifiers
Artikel i vetenskaplig tidskrift, 2008
SiC Schottky diode varactors with a high breakdown voltage, a high tuning ratio, and a low series resistance have been designed and fabricated. These characteristics are particularly necessary for the dynamic load modulation of high power amplifiers (PAs), which is an attractive alternative to other efficiency enhancement techniques. For a SiC Schottky diode varactor with a 50- radius fabricated by using a graded doping profile, a breakdown voltage of 40 V, a tuning range of 5.6, and a series resistance of 0.9 were achieved. The results show the great potential of this type of varactors for the use in the dynamic load modulation of high power amplifiers.
Schottky diodes electric breakdown micromechanical devices power amplifiers semiconductor doping silicon compounds varactors wide band gap semiconductors
Författare
Mattias Sudow
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Hossein Mashad Nemati
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Mattias Thorsell
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Ulf Gustavsson
Chalmers University of Technology
Kristoffer Andersson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Christian Fager
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Per-Åke Nilsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
J Hassan
Linkopings universitet
Anne Henry
Linkopings universitet
Erik Janzén
Linkopings universitet
Hendrikus Jos
Chalmers University of Technology
NXP Semiconductors
Niklas Rorsman
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
IEEE Electron Device Letters
0741-3106 (ISSN)
Vol. 29 7 728-730Ämneskategorier (SSIF 2011)
Annan elektroteknik och elektronik
Den kondenserade materiens fysik
DOI
10.1109/LED.2008.2000642