Molecular beam epitaxy growth of A 1.58 μm InGaAs quantum well laser on GaAs
Paper i proceeding, 2008
We demonstrate how MBE growth parameters can be optimized to produce a metamorphic InGaAs QW laser emitting in the 1.55 ?m range. Different techniques to suppress roughening while maintaining low threading dislocation densities are evaluated. Finally, we demonstrate a 50×1250 ?m 2 broad area FabryPerot laser that produces pulsed lasing with a threshold current density of 490 A/cm2 and a wavelength of 1.58 ?m at room temperature.
Författare
Ivar Tångring
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Anders Larsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
H. Q. Ni
Institute of Semiconductors Chinese Academy of Sciences
B. P. Wu
Institute of Semiconductors Chinese Academy of Sciences
D. H. Wu
Institute of Semiconductors Chinese Academy of Sciences
Y. H. Xiong
Institute of Semiconductors Chinese Academy of Sciences
S. S. Huang
Institute of Semiconductors Chinese Academy of Sciences
Zhichuan Niu
Institute of Semiconductors Chinese Academy of Sciences
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
10928669 (ISSN)
4702982978-142442259-3 (ISBN)
Ämneskategorier (SSIF 2011)
Materialteknik
DOI
10.1109/ICIPRM.2008.4702982
ISBN
978-142442259-3