High power heterostructure barrier varactor quintupler sources for G-band operation
Paper i proceeding, 2008
We have designed a frequency multiplier based on Heterostructure Barrier Varactors (HBVs) at 202 GHz. The InGaAs/InAlAs/InP HBV diodes were flip-chip mounted onto an aluminium-nitride (AlN) substrate with the microstrip pattern. The AlN-circuit was then mounted in an ultra compact 30x9 mm waveguide block. A quintupler (x5) operating at 202 GHz produced an output power of 23 mW.
Författare
Josip Vukusic
Chalmers, Mikroteknologi och nanovetenskap (MC2)
Tomas Bryllert
California Institute of Technology
Wasa Millimeter Wave AB
Jan Stake
Chalmers, Mikroteknologi och nanovetenskap (MC2)
19th International Symposium on Space Terahertz Technology, ISSTT 2008; Groningen; Netherlands; 28 April 2008 through 30 April 2008
472-475
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik