Structural properties of GeSn thin films grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2017
GeSn thin films on Ge (001) with various Sn concentrations from 3.36 to 7.62% were grown by molecular beam epitaxy and characterized. The structural properties were analyzed by reciprocal space mapping in the symmetric (004) and asymmetric (224) planes by high resolution X-ray diffraction (XRD). The lateral correlation length (LCL) and the mosaic spread (MS) were extracted for the epi-layer peaks in the asymmetric (224) diffraction. With the increase of Sn concentration, the LCL reduces while the MS increases, indicating degrading crystalline quality. Dislocations were observed in the sample with 7.62% Sn concentration by transmission electron microscope, consistent with the strain relaxation found in XRD mapping. Besides, the surface morphologies were investigated.
Författare
Z. P. Zhang
ShanghaiTech University
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. X. Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Z. Y. S. Zhu
ShanghaiTech University
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. Han
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. M. Chen
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Y. Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
AIP Advances
2158-3226 (ISSN)
Vol. 7 4 Article number 045211- 045211Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Nanoteknik
DOI
10.1063/1.4982245