Highly tensile-strained sub-monolayer Ge nanostructure on GaSb studied by scanning tunneling microscopy
Artikel i vetenskaplig tidskrift, 2017
Highly tensile-strained sub-monolayer Ge nanostructures on GaSb have been grown by molecular beam epitaxy and studied by ultrahigh-vacuum scanning tunneling microscopy. Four different coverage rates of Ge nanostructures on GaSb are achieved and investigated. It is found the growth of Ge on GaSb follows 2D growth mode. The crystal lattice of the sub-monolayer Ge nanostructures is coherent with that of the GaSb, inferring as large as 7.74% tensile strain in the Ge nanostructures.
nanostructure
tensile-strained Ge
scanning tunneling microscopy
Författare
Y. Li
Shanghai University
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. X. Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Z. P. Zhang
ShanghaiTech University
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. M. Chen
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
F.X.Zha
Shanghai University
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Materials Research Express
2053-1591 (eISSN)
Vol. 4 4 Article nr 045907 -Ämneskategorier (SSIF 2011)
Nanoteknik
DOI
10.1088/2053-1591/aa6bbf