Novel Dilute Bismide, Epitaxy, Physical Properties and Device Application
Artikel i vetenskaplig tidskrift, 2017
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least studied III-V compound semiconductor and has received steadily increasing attention since 2000. In this paper, we review theoretical predictions of physical properties of bismide alloys, epitaxial growth of bismide thin films and nanostructures, surface, structural, electric, transport and optic properties of various binaries and bismide alloys, and device applications.
III-N-Bi
III-Sb-Bi
MBE
III-As-Bi
droplet
III-P-Bi
surfactant
dilute bismide
MOCVD
Författare
L Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Y. Zhang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
D. Liang
Beijing University of Posts and Telecommunications
X Chen
Shanghai Institute of Technical Physics Chinese Academy of Sciences
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
P. F. Lu
Beijing University of Posts and Telecommunications
J. Shao
Shanghai Institute of Technical Physics Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Crystals
2073-4352 (ISSN)
Vol. 7 3 Article no 63 -Ämneskategorier (SSIF 2011)
Materialteknik
DOI
10.3390/cryst7030063