A direct extraction algorithm for a submicron MOS transistor model
Paper i proceeding, 1993
A four-point technique for direct extraction of the linear region model parameters of submicron transistors is presented. The choice of data points for minimizing sensitivity to measurement noise is discussed. For a submicron transistor model where a second order mobility reduction factor is included to model the quadratic gate voltage dependence, direct extraction of the four linear-region parameters is possible using only four data points. This means that efficient parameter extraction is facilitated and that this type of submicron transistor model can be used in production control.
Solid state circuits
Transistors
Threshold voltage
MOSFETs
Data mining
Circuit noise
Solid modeling
Noise measurement
Sensitivity analysis
Geometry
Författare
Peter R. Karlsson
Institutionen för fasta tillståndets elektronik
Kjell Jeppson
Institutionen för mikroelektronik och nanovetenskap
Institutionen för fasta tillståndets elektronik
Proceedings of the International Conference on Microelectronic Test Structures ICMTS
Vol. 1993 22-25 March 1993
0-7803-0857-3 (ISBN)
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
ISBN
0-7803-0857-3