A direct method to extract effective geometries and series resistances of MOS transistors
Paper i proceeding, 1994
A new direct method for rapid characterization of MOS transistor effective geometries and series resistances is presented. The method only requires devices of four different sizes. Also presented is a new linear regression technique that offers a natural extension of the method to any arbitrary number of devices. Finally, the channel width dependence of the mobility reduction factor is shown to be explained by the electrical broadening of the channel.
Circuit synthesis
Optimization methods
Electric resistance
Linear regression
Condition monitoring
Solid state circuits
SPICE
Geometry
Threshold voltage
MOSFETs
Författare
Peter R. Karlsson
Institutionen för fasta tillståndets elektronik
Kjell Jeppson
Institutionen för fasta tillståndets elektronik
Institutionen för mikroelektronik och nanovetenskap
Proceedings of the International Conference on Microelectronic Test Structures ICMTS
Vol. 1994 22-25 March 1994
0-7803-1757-2 (ISBN)
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
ISBN
0-7803-1757-2