Developing Graphene based MMICs on SiC substrate

Paper i proceeding, 2015

This paper presents the fabrication process development of monolithic microwave integrated circuits (MMICs) based on graphene field effect transistors (G-FETs). In this process, the G-FETs are based on epitaxial graphene on SiC substrate. Base on this process, a wide-band amplifier (0-3GHz) with 6-7 dB gain is realized.