Influence of GaAsBi Matrix on Optical and Structural Properties of InAs Quantum Dots
Artikel i vetenskaplig tidskrift, 2016
InAs/GaAsBi dot-in-well structures were fabricated using gas-source molecular beam epitaxy and investigated for its optical and structural properties. GaAsBi-strained buffer layer and strain reduction layer are both effective to extend the photoluminescence (PL) emission wavelength of InAs quantum dot (QD). In addition, a remarkable PL intensity enhancement is also obtained compared with low-temperature-grown GaAs-capped InAs QD sample. The GaAsBi matrix also preserves the shape of InAs QDs and leads to increase the activation energy for nonradiative recombination process at low temperature. Lower density and larger size of InAs QDs are obtained on the GaAsBi surface compared with the QDs grown on GaAs surface.
MBE
Quantum dot
Thermal stability
InAs
GaAsBi
Författare
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
W. W. Pan
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
X. Y. Wu
Chinese Academy of Sciences
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
J. J. Liu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
C. F. Cao
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Nanoscale Research Letters
1931-7573 (ISSN) 1556-276X (eISSN)
Vol. 11 1 280Ämneskategorier (SSIF 2011)
Den kondenserade materiens fysik
DOI
10.1186/s11671-016-1470-1