A High Voltage mm-wave Stacked HEMT Power Amplifier in 0.1 mu m m InGaAs Technology
Paper i proceeding, 2015
A stacked HEMT PA has been designed and implemented in a commercial 0.1 mu m InGaAs pHEMT process to increase gain and output power at mm-waves. Measurements on the 3-stage PA with parallel devices verify saturated output power of 25 dBm and maximum PAE of 15 % at 61 GHz, which is the highest reported output power of similar designs and topologies. The chip size measures 3.2 mm(2) which makes this the most power dense V-band amplifier reported from GaAs with 100 mW/mm(2).
mm-wave
FET
MMIC
PA
Power Amplifier
V-band
Stacked
GaAs
HEMT
Författare
Marcus Gavell
Gotmic AB
Iltcho Angelov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Mattias Ferndahl
Gotmic AB
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
2015 IEEE MTT-S International Microwave Symposium, IMS 2015
7166754
978-1-4799-8275-2 (ISBN)
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1109/MWSYM.2015.7166754
ISBN
978-1-4799-8275-2