Symmetry based nonlinear model for GaN HEMTs

Paper i proceeding, 2015

This paper presents a new nonlinear transistor model based on a symmetrical small-signal model for GaN HEMTs. The intrinsic symmetry reflected into the small signal equivalent circuit is used to build a new model to describe the nonlinear behavior of the device. The model consists of a new nonlinear charge expression with only 6 parameters, while the nonlinear current expression is extended from an existing model to enable validity in both the positive and negative Vds region. Therefore, it can be used for transistors in switches, resistive mixers as well as amplifiers. The model is validated with both small-signal and nonlinear measurements showing good agreements.