Novel InGaPBi single crystal grown by molecular beam epitaxy
Artikel i vetenskaplig tidskrift, 2015
InGaPBi crystalline thin films with up to 2.1% bismuth concentration have been grown on GaAs substrates by molecular beam epitaxy. Rutherford backscattering spectrometry confirms that the majority of Bi atoms are located at substitutional lattice sites. The films exhibit good surface, structural, and interface quality, and their strains can be tuned from tensile to compressive by increasing the Bi content. InBi LO and GaBi LO vibrational modes in Raman spectroscopy were observed, and their intensities increased with Bi concentration. A weak photoluminescence signal was observed at 1.78 eV at room temperature for the sample with a Bi content of 0.5%.
Författare
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
P. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
K. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Chinese Academy of Sciences
X. Y. Wu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
W. W. Pan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. Li
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. X. Song
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Yi Gu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
J. Q. Ning
The University of Hong Kong
S. Xu
The University of Hong Kong
Applied Physics Express
18820778 (ISSN) 18820786 (eISSN)
Vol. 8 4 Art. no. 041201-Ämneskategorier (SSIF 2011)
Annan teknik
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DOI
10.7567/apex.8.041201