Contactless electroreflectance and theoretical studies of band gap and spin-orbit splitting in InP1-xBix dilute bismide with x <= 0.034
Artikel i vetenskaplig tidskrift, 2014
Contactless electroreflectance is applied to study the band gap (E-0) and spin-orbit splitting (Delta(SO)) in InP1-xBix alloys with 0 < x <= 0.034. The E-0 transition shifts to longer wavelengths very significantly (-83 meV/% Bi), while the E0 + Delta(SO) transition shifts very weakly (-13 meV/% Bi) with the rise of Bi concentration. These changes in energies of optical transitions are discussed in the context of the valence band anticrossing model and ab initio calculations. Shifts of E-0 and E-0 + Delta(SO) transitions, obtained within ab-initio calculations, are -106 and -20 meV per % Bi, respectively, which is in a good agreement with experimental results.
Författare
J. Kopaczek
Wrocław University of Science and Technology
R Kudrawiec
Wrocław University of Science and Technology
M. P. Polak
Wrocław University of Science and Technology
P. Scharoch
Wrocław University of Science and Technology
M. Birkett
University of Liverpool
T. D. Veal
University of Liverpool
K. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Yi Gu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 105 22 222104Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1063/1.4903179