Tuning carrier density across Dirac point in epitaxial graphene on SiC by corona discharge
Artikel i vetenskaplig tidskrift, 2014
We demonstrate reversible carrier density control across the Dirac point (Delta n similar to 10(13) cm(-2)) in epitaxial graphene on SiC (SiC/G) via high electrostatic potential gating with ions produced by corona discharge. The method is attractive for applications where graphene with a fixed carrier density is needed, such as quantum metrology, and more generally as a simple method of gating 2DEGs formed at semiconductor interfaces and in topological insulators.
Författare
Arseniy Lartsev
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Thomas Yager
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
T. Bergsten
SP Technical Research Institute of Sweden
A.Y. Tzalenchuk
Royal Holloway University of London
National Physical Laboratory
Tjbm Janssen
National Physical Laboratory
R. Yakimova
Linkopings universitet
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Applied Physics Letters
0003-6951 (ISSN) 1077-3118 (eISSN)
Vol. 105 6 063106Graphene-Based Revolutions in ICT And Beyond (Graphene Flagship)
Europeiska kommissionen (FP7) (EC/FP7/604391), 2013-10-01 -- 2016-03-31.
Styrkeområden
Nanovetenskap och nanoteknik
Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1063/1.4892922