Express Optical Analysis of Epitaxial Graphene on SiC: Impact of Morphology on Quantum Transport
Artikel i vetenskaplig tidskrift, 2013
We show that inspection with an optical microscope allows surprisingly simple and accurate identification of single and multilayer graphene domains in epitaxial graphene on silicon carbide (SiC/G) and is informative about nanoscopic details of the SiC topography, making it ideal for rapid and noninvasive quality control of as-grown SiC/G. As an illustration of the power of the method, we apply it to demonstrate the correlations between graphene morphology and its electronic properties by quantum magneto-transport.
V49
1984
optical microscopy
REIBL N
graphene
OPTICS COMMUNICATIONS
SINGLE-LAYER
graphene characterization
electron transport
Epitaxial graphene
PHASE
TRANSISTORS
SIO2
P6
LAYER GRAPHENE
Författare
Thomas Yager
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Arseniy Lartsev
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Sumedh Mahashabde
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Sophie Charpentier
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Dejan Davidovikj
Chalmers, Mikroteknologi och nanovetenskap (MC2)
Andrey Danilov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
R. Yakimova
Linkopings universitet
V. Panchal
Royal Holloway University of London
National Physical Laboratory
O. Kazakova
National Physical Laboratory
A.Y. Tzalenchuk
National Physical Laboratory
Royal Holloway University of London
Samuel Lara Avila
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Sergey Kubatkin
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Nano Letters
1530-6984 (ISSN) 1530-6992 (eISSN)
Vol. 13 9 4217-4223Ämneskategorier (SSIF 2011)
Nanoteknik
DOI
10.1021/nl402347g