Dilute bismides for near and mid-infrared applications
Paper i proceeding, 2013
Dilute bismides are a group of emerging materials with unique properties. Incorporation of a small amount of Bi in common III-V host materials results in large band-gap reduction and strong spin-orbit splitting, leading to potential applications in near-infrared (NIR) and mid-infrared (MIR) optoelectronics. Recent progresses on molecular beam epitaxy (MBE) of novel III-Sb-Bi, i.e. GaSbBi and InSbBi thin films from our group are summarised in this paper. Quantum well structures based on GaSbBi and InGaAsBi aiming for the optical communication window were grown and characterized. © 2013 IEEE.
dilute bismide
MBE
InGaAsBi
infrared
GaSbBi
InSbBi
Författare
Yuxin Song
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Yi Gu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Hong Ye
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Peixiong Shi
Danmarks Tekniske Universitet
A. Hallen
The Royal Institute of Technology (KTH)
X Chen
Shanghai Institute of Technical Physics Chinese Academy of Sciences
Jun Shao
Shanghai Institute of Technical Physics Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
International Conference on Transparent Optical Networks
2162-7339 (eISSN)
978-1-4799-0682-6 (ISBN)
Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1109/ICTON.2013.6602735
ISBN
978-1-4799-0682-6