Growth of metamorphic InGaP layers on GaAs substrates
Artikel i vetenskaplig tidskrift, 2013
We report on the growth of InGaP metamorphic layer by gas source molecular-beam epitaxy. After optimization of the growth temperatures of the compositionally graded InGaP layer and the indium content in the top metamorphic InGaP layer, almost fully relaxed metamorphic layer was obtained with surface roughness of only about 2.17 nm. Strong photoluminescence signals were measured from both InGaAs quantum well and InAs quantum dots embedded in the metamorphic layer, indicating that the top metamorphic layer had low density of threading dislocations. (c) 2013 Elsevier B.V. All rights reserved.
Stresses
Molecular beam epitaxy
molecular-beam epitaxy
optimization
Phosphides
Semiconducting III-V
materials
Författare
J. Y. Yan
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. Gong
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
L. Yue
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Q. B. Liu
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
R. H. Cheng
Qufu Normal University
C. F. Cao
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Y. Wang
Shanghai Institute of Microsystem and Information Technology Chinese Academy of Sciences
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Journal of Crystal Growth
0022-0248 (ISSN)
Vol. 378 141-144Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1016/j.jcrysgro.2012.12.138