Tracer diffusion of boron in alpha-Ti and gamma-TiAl
Artikel i vetenskaplig tidskrift, 2008
Tracer diffusion of boron in pure alpha-Ti and gamma-TiAl (54 at.% A]) was measured by secondary ion mass spectroscopy using the stable B-11 isotope. The diffusion coefficients follow Arrhenius temperature dependencies with the frequency factors D-0 = 4.2 x 10(-6) and 2.48 x 10(-5) m(2) s(-1) and the activation enthalpies Q = 113 and 200 kJ mol(-1) for B diffusion in polycrystalline alpha-Ti and gamma-TiAl, respectively. Boron is a fast diffuser in both Ti and TiAl. The ratio of boron and titanium diffusivities is as large as 10(6)-10(7) in alpha-Ti and amounts to 10(3)-10(4) in gamma-TiAl. These results indicate a diffusion mechanism involving interstitial jumps. The relatively high activation enthalpy of B diffusion in gamma-TiAl is explained by the structure of the octahedral sites in the intermetallic compound.
behavior
self-diffusion
al
titanium
zr
based on TiAl
defects : point defects
single-crystal
alloys
microstructure
solute diffusion
titanium aluminides
diffusion
barrier
Författare
S. Divinski
Westfaelische Wilhelms-Universität Münster
F. Hisker
Westfaelische Wilhelms-Universität Münster
T. Wilger
Westfaelische Wilhelms-Universität Münster
Milan Friesel
Chalmers, Teknisk fysik
C. Herzig
Westfaelische Wilhelms-Universität Münster
Intermetallics
0966-9795 (ISSN)
Vol. 16 2 148-155Ämneskategorier (SSIF 2011)
Den kondenserade materiens fysik
DOI
10.1016/j.intermet.2007.08.008