A W-and G-band MMIC source using InP HBT technology
Paper i proceeding, 2012
A frequency doubler/quadrupler for W-and G-band application is designed and fabricated utilizing an InP 250nm heterojunction bipolar transistor process. The multiplier is integrated with balanced V-band VCO. The VCO can be tuned between 57 to 61 GHz with average output power of 6 dBm and phase noise lower than 95 dBc/Hz at 1 MHz offset frequency. The circuit VCO plus multiplier can be used as a source with output power of 2dBm in 113-118 GHz bandwidth and 4dBm from 212 to 228 GHz.
Differential doubler
Voltage controlled oscillator
Heterojunction bipolar transistor
Författare
Rumen Kozhuharov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
M. Bao
Ericsson Sweden
Marcus Gavell
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
IEEE MTT-S International Microwave Symposium Digest
0149645X (ISSN)
1 - 3 6258435978-1-4673-1087-1 (ISBN)
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1109/MWSYM.2012.6258435
ISBN
978-1-4673-1087-1