High-Throughput On-Chip Large Deformation of Silicon Nanoribbons and Nanowires
Artikel i vetenskaplig tidskrift, 2012
An on-chip internal stress-based testing device has been developed in order to deform silicon nanoribbons and nanowires up to large strains enabling high throughput of data. The fracture strain and survival probability distribution have been generated for 50-nm-thick and 50- or 500-nm-wide specimens with lengths varying between 2.5 and 10 mu m. Fracture strains reaching up to 5% are attained in the smallest specimens, whereas 90% of the specimens survive 2.5% deformation. This testing platform opens an avenue to investigate and use electromechanical couplings appearing under large mechanical stress or large deformation.
operties microstructure and processing
nanoelectromechanical systems (NEMS)
materials
on-chip testing
aluminum
Fracture strain
youngs modulus
film mechanical-properties
stress
mems
strength
giant piezoresistance
v234
material-testing-system
bulge test
freestanding thin-films
p37
Författare
V. Passi
IEMN Institut d'Electronique de Microelectronique et de Nanotechnologie
Universite Catholique de Louvain
U. Bhaskar
Universite Catholique de Louvain
T. Pardoen
Universite Catholique de Louvain
Ulf Södervall
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Bengt Nilsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Göran Petersson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Mats Hagberg
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
J. P. Raskin
Universite Catholique de Louvain
Journal of Microelectromechanical Systems
1057-7157 (ISSN)
Vol. 21 4 822-829Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1109/JMEMS.2012.2190711