A 14 Gbps On-/Off- Keying Modulator in GaAs HBT Technology
Artikel i vetenskaplig tidskrift, 2012
A proof of concept on-/off- keying (OOK) modulator is designed and implemented in a commercial heterojunction bipolar transistors IC process. The modulator circuit consists of an amplifier/latch structure, which is used as an OOK modulator for the first time. One of its advantages is that the topology may be implemented in both field effect transistor and bipolar technology. The measurement results correspond well with simulation and show that the modulator is capable of handling carrier frequencies up to 28 GHz, and data rates up to 14 Gbps. The isolation of the modulator in the off-state is better than 27 dB over the whole frequency range.
on-/off- keying
GaAs heterojunction bipolar transistor (HBT)
MMIC
latch
Emitter-coupled pair
Författare
Zhongxia Simon He
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Thomas Swahn
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
Yinggang Li
Telefonaktiebolaget LM Ericsson
Herbert Zirath
Chalmers, Mikroteknologi och nanovetenskap (MC2), Mikrovågselektronik
IEEE Microwave and Wireless Components Letters
1531-1309 (ISSN)
Vol. 22 5 272-274Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1109/lmwc.2012.2192418