Bismuth incorporation and lattice contraction in GaSbBi and InSbBi
Paper i proceeding, 2011
III-V-Bi compounds have received considerable attention recently due to a number of interesting material properties. For example, adding a small amount of Bi atoms in conventional III-Vs leads to a large bandgap reduction that occurs predominately in the valence band, about 88 meV/%Bi in GaAsBi. The Bi incorporation affects only the valence band structures and has little influence on electrons. Compared with dilute nitrides, the electron mobility of dilute GaAsBi is much less affected and photoluminescence intensity increases with the Bi incorporation. Dilute GaAsBi also introduces a large spin-orbit split and it has been suggested to use this property to suppress Auger recombination for 1.55 μm lasers on GaAs [1]. So far most experimental studies have been focused on growth of GaAsBi [2], but very little on GaSbBi and InSbBi. Here we report growth of dilute GaSbBi and InSbBi using molecular beam epitaxy (MBE). We have optimized growth conditions aiming at achieving maximum Bi incorporation. Surprisingly X-ray diffraction (XRD) revealed lattice contraction in GaSbBi and InSbBi although Bi atoms have a large atomic radius.
Bismuth compounds
Photoluminescence intensities
Auger recombination
Spin orbits
Atomic radius
Molecular beams
Fiber optic networks
Atoms
Electron mobility
Experimental studies
Material property
Molecular beam epitaxy
Bismuth
Growth conditions
X ray diffraction
GaAs
Band gap reduction
Nitrides
Lattice contraction
Transparent optical networks
Dilute nitrides
Författare
Shu Min Wang
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Yuxin Song
Chalmers, Mikroteknologi och nanovetenskap (MC2), Fotonik
Ivy Saha Roy
Chalmers University of Technology
13th International Conference on Transparent Optical Networks, ICTON 2011, Stockholm, 26-30 June 2011
2162-7339 (eISSN)
978-145770880-0 (ISBN)
Ämneskategorier (SSIF 2011)
Elektroteknik och elektronik
DOI
10.1109/ICTON.2011.5970830
ISBN
978-145770880-0