Microscopic Si whiskers
Artikel i vetenskaplig tidskrift, 2011
Physical properties of microscopic silicon whiskers formed by reactive ion etching in chlorine plasma are reported in an attempt to clarify the formation mechanism and the origin of the observed optical and electrical phenomena. The silicon whiskers with diameters of well under 5 nm exhibit strong photoluminescence (PL) both in visible and infrared, which are related to quantum confinement, near band-edge and defects. Vibrational analysis indicate that disorder induced LO-TO optical mode coupling is very effective. Electric field emission properties of these microscopic features were also investigated to determine their potential for advanced technology applications. (C) 2011 Elsevier B.V. All rights reserved.
Silicon
Photoluminescence
Black silicon
Nanowires
Nanowhiskers
temperature
1987
ow tp
p1281
silicon nanowires
field
v134
Field emission
Författare
S. Kalem
Turkiye Bilimsel ve Teknolojik Arastirma Kurumu
P. Werner
Administrative Headquarters of the Max Planck Society
Mats Hagberg
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Bengt Nilsson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
V. Talalaev
Administrative Headquarters of the Max Planck Society
Örjan Arthursson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Henrik Frederiksen
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Ulf Södervall
Chalmers, Mikroteknologi och nanovetenskap (MC2), Nanotekniklaboratoriet
Microelectronic Engineering
0167-9317 (ISSN)
Vol. 88 8 2593-2596Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1016/j.mee.2011.02.072