Optimized transport properties of LaAlO3/SrTiO3 heterointerfaces by variation of pulsed laser fluence
Artikel i vetenskaplig tidskrift, 2011
We show the influence of pulsed laser deposition fluence on the transport properties of the LaAlO(3)/SrTiO(3) (LAO/STO) heterointerface. Structural characterization by x-ray diffraction and medium energy ion spectrometry enables us to deduce that the electronic behaviour is extremely sensitive to the stoichiometry of the LAO layer as well as the structural quality of the STO surface. An optimum balance of these two quantities is demonstrated for an intermediate laser fluence.
interfaces
Författare
F. Schoofs
University of Cambridge
T. Fix
University of Cambridge
Alexei Kalaboukhov
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
Dag Winkler
Chalmers, Mikroteknologi och nanovetenskap (MC2)
Iouri Boikov
Ioffe Institute
I.T. Serenkov
Ioffe Institute
V.I. Sakharov
Ioffe Institute
Tord Claeson
Chalmers, Mikroteknologi och nanovetenskap (MC2), Kvantkomponentfysik
L. MacManus-Driscoll
University of Cambridge
M. G. Blamire
University of Cambridge
Journal of Physics Condensed Matter
0953-8984 (ISSN)
Vol. 23 30 305002Ämneskategorier (SSIF 2011)
Fysik
DOI
10.1088/0953-8984/23/30/305002